Micro magnetic field (MMF) sensors developed employing complementary metal oxide\nsemiconductor (CMOS) technology are investigated. The MMF sensors, which are a three-axis\nsensing type, include a magnetotransistor and four Hall elements. The magnetotransistor is utilized\nto detect the magnetic field (MF) in the x-axis and y-axis, and four Hall elements are used to sense\nMF in the z-axis. In addition to emitter, bases and collectors, additional collectors are added to\nthe magnetotransistor. The additional collectors enhance bias current and carrier number, so that\nthe sensor sensitivity is enlarged. The MMF sensor fabrication is easy because it does not require\npost-CMOS processing. Experiments depict that the MMF sensor sensitivity is 0.69 V/T in the x-axis\nMF and its sensitivity is 0.55 V/T in the y-axis MF.
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